The Evolution of Microprocessor:

The 45 nanometer (45 nm) process is the next milestone (commercially viable as of November 2007) in semiconductor fabrication. Intel started mass producing 45 nm chips in November 2007, AMD is targeting 45 nm production in 2008, while IBM, Infineon, Samsung, and Chartered Semiconductor have already completed a common 45 nm process platform. By the end of 2008, SMIC will be the first China-based semiconductor company to move to 45 nm, having licensed the bulk 45 nm process from IBM.

At IEDM 2007, more technical details of Intel's 45 nm process were revealed: * 160 nm gate pitch (73% of 65 nm generation) * 35 nm gate length (same as 65 nm generation) * 1 nm equivalent oxide thickness, with 7 Å transition layer * gate-last process using dummy polysilicon * 9 layers of low-k Cu interconnect, the last being a thick "redistribution" layer * contacts shaped more like rectangles than circles for local interconnection * lead-free packaging * 1.36 mA/um nFET drive current * 1.07 mA/um pFET drive current, 51% faster than 65 nm generation, with higher hole mobility due to increase from 23% to 30% Ge in embedded SiGe stressors



Intel's new 45nm Penryn microprocessor relies on a new recipe that combines the element Hafnium and metal gate technology to increase performance and significantly reduce eco-unfriendly, wasteful electricity leaks. But what does that mean?

Note: A viewer alerted us to a mistake, so this is the updated version . Originally posted November 11, the video was viewed by more than 12,000 times, favorited 20 times and 26 comments as of January 25, 2008. We apologize for any inconvenience. (less)



Inside the Ultra Mobiity workspace with Uday Keshavdas, who's prepping for the Intel Developer Forum in Shanghai April 2-3, 2008. He shows Mobile Internet Devices, including one that he cracks open to show where the new Intel Atom processor fits.

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